To understand and engineer contacts for electronic devices, we apply knowledge of thermodynamics, kinetics, processing, microscopy, spectroscopy, solid-state theory, and electrical characterization. In this presentation, I review our work on contacts to III-V semiconductors, including arsenides, antimonides, phosphides, and nitrides of aluminium, gallium, and indium. Examples will be chosen to illustrate how contact metallurgy and processing conditions can be selected to control the Schottky barrier height and doping near the metal/semiconductor
interface, which is crucial for controlling contact resistance. We also discuss how to design shallow and thermally stable contacts.
Suzanne Mohney is a Professor of Materials Science and Engineering and Electrical Engineering at The Pennsylvania State University. Prior to 2004, she was an Associate or Assistant Professor at Penn State. She earned a Ph.D. in Materials Science in 1994 from the University of Wisconsin–Madison after earning a B.S. in chemical engineering from Washington University in St. Louis. She is a fellow of AVS and has been a recipient of research awards from The Electrochemical Society and Penn State!s College of Earth and Mineral Sciences. Her research focuses on electronic materials, including electrical contacts and the synthesis of thin-films and nanostructures.