Chennupati Jagadish
Employer: Australian National University
Centre Role: Chief Investigator
Job Title in TMOS: Distinguished Professor, Theme Co-Leader (Light Generation)
Research Interests:
- Compound Semiconductors, e.g. growth, processing, characterization
- Optoelectronic Devices, e.g. lasers, LEDs, quantum emitters, detectors, modulators
- Nanotechnology, e.g. nanowires, quantum dots, nanomembranes
- Energy Technologies, e.g. solar cells, photoelectrochemical devices
- Neurotechnologies, e.g. nanoelectrodes for neuronal circuit engineering and measurements
- THz Photonics, e.g. sources, detectors, modulators
- Meta-Optics, e.g. beam steering, polarisation control, nonlinear frequency generation
Education:
PhD in Physics (semiconductors), 1986, University of Delhi
MPhil in Physics (semiconductors), 1982, University of Delhi
MSc(Tech) in Physics (semiconductors), 1980, Andhra University
BSc in Physics, 1977, Nagarjuna University
- Compound Semiconductors, e.g. growth, processing, characterization
- Optoelectronic Devices, e.g. lasers, LEDs, quantum emitters, detectors, modulators
- Nanotechnology, e.g. nanowires, quantum dots, nanomembranes
- Energy Technologies, e.g. solar cells, photoelectrochemical devices
- Neurotechnologies, e.g. nanoelectrodes for neuronal circuit engineering and measurements
- THz Photonics, e.g. sources, detectors, modulators
- Meta-Optics, e.g. beam steering, polarisation control, nonlinear frequency generation
Education:
PhD in Physics (semiconductors), 1986, University of Delhi
MPhil in Physics (semiconductors), 1982, University of Delhi
MSc(Tech) in Physics (semiconductors), 1980, Andhra University
BSc in Physics, 1977, Nagarjuna University
Biography:
Jagadish is a Distinguished Professor and Head of Semiconductor Optoelectronics and Nanotechnology Group in the Research School of Physics, Australian National University. He has served as Vice-President and Secretary Physical Sciences of the Australian Academy of Science during 2012-2016. He is currently serving as Past President of IEEE Photonics Society, Past President of Australian Materials Research Society and Convener of Australian Nanotechnology Network. Jagadish is the Editor-in-Chief of Applied Physics Reviews, Editor of 3 book series and serves on editorial boards of 20 other journals. He has published more than 940 research papers (660 journal papers), holds 5 US patents, co-authored a book, co-edited 15 books, edited 13 conference proceedings and 18 special issues of Journals. He has won the 2000 IEEE Millennium Medal and received Distinguished Lecturer awards from IEEE NTC, IEEE LEOS and IEEE EDS. He has given more than 190 plenary/keynote/invited talks at primary conferences in the field.
Jagadish is a Foreign Member of US National Academy of Engineering, a Fellow of the Australian Academy of Science, Australian Academy of Technological Sciences and Engineering, The World Academy of Sciences, US National Academy of Inventors, Indian National Science Academy, Indian National Academy of Engineering, Indian Academy of Sciences, Andhra Pradesh Akademi of Sciences, IEEE, APS, MRS, OSA, AVS, ECS, SPIE, AAAS, FEMA, APAM, IoP (UK), IET (UK), IoN (UK) and the AIP. He received many awards including IEEE Pioneer Award in Nanotechnology, IEEE Photonics Society Engineering Achievement Award, OSA Nick Holonyak Jr Award, ISCS Welker Award, IUMRS Somiya Award, UNESCO medal for his contributions to the development of nanoscience and nanotechnologies, IEEE EDS Education Award, AOS Beattie Steel Medal and Lyle medal from the Australian Academy of Science. He has received Australia’s highest civilian honor, AC, Companion of the Order of Australia, as part of 2016 Australia day honors from the Governor General of Australia for his contributions to physics and engineering, in particular nanotechnology.
Jagadish and his wife Vidya have created an Endowment to support visiting students from developing countries to spend up to 3 months at ANU Physics to gain research experience and develop collaborative linkages.
- (2021). Effect of Au Substrate and Coating on the Lasing Characteristics of GaAs Nanowires. In: Scientific Reports, vol. 11, no. 1, pp. 21378, 2021, ISSN: 2045-2322.
- (2021). Passivation of InP Solar Cells Using Large Area Hexagonal-BN Layers. In: npj 2D Materials and Applications, vol. 5, no. 1, pp. 12, 2021, ISSN: 2397-7132.
- (2021). Thermodynamic Properties of Metastable Wurtzite InP Nanosheets. In: Journal of Physics D: Applied Physics, vol. 54, no. 50, pp. 505112, 2021, ISSN: 0022-3727, 1361-6463.
- (2021). Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature. In: Advanced Materials, vol. 33, no. 49, pp. 2105729, 2021, ISSN: 0935-9648, 1521-4095.
- (2021). Narrow-Bandgap InGaAsP Solar Cell with TiO textsubscript2 Carrier-Selective Contact. In: physica status solidi (RRL) – Rapid Research Letters, vol. 15, no. 11, pp. 2100282, 2021, ISSN: 1862-6254, 1862-6270.
- (2021). Controlling the Lasing Modes in Random Lasers Operating in the Anderson Localization Regime. In: Optics Express, vol. 29, no. 21, pp. 33548, 2021, ISSN: 1094-4087.
- (2021). Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging. In: Nano Letters, vol. 21, no. 17, pp. 7388–7395, 2021, ISSN: 1530-6984, 1530-6992.
- (2021). Manipulating Intermediates at the Au–TiO textsubscript2 Interface over InP Nanopillar Array for Photoelectrochemical CO textsubscript2 Reduction. In: ACS Catalysis, vol. 11, no. 18, pp. 11416–11428, 2021, ISSN: 2155-5435, 2155-5435.
- (2021). Thin Silicon via Crack-Assisted Layer Exfoliation for Photoelectrochemical Water Splitting. In: iScience, vol. 24, no. 8, pp. 102921, 2021, ISSN: 25890042.
- (2021). Surface-Tailored InP Nanowires via Self-Assembled Au Nanodots for Efficient and Stable Photoelectrochemical Hydrogen Evolution. In: Nano Letters, vol. 21, no. 16, pp. 6967–6974, 2021, ISSN: 1530-6984, 1530-6992.
- (2021). Epitaxially Grown InP Micro-Ring Lasers. In: Nano Letters, vol. 21, no. 13, pp. 5681–5688, 2021, ISSN: 1530-6984, 1530-6992.
- (2021). Infrared Upconversion Imaging in Nonlinear Metasurfaces. In: Advanced Photonics, vol. 3, no. 03, 2021, ISSN: 2577-5421.
- (2021). Understanding, Engineering, and Modulating the Growth of Neural Networks: An Interdisciplinary Approach. In: Biophysics Reviews, vol. 2, no. 2, pp. 021303, 2021, ISSN: 2688-4089.
- (2021). 2D Carrier Localization at the Wurtzite-Zincblende Interface in Novel Layered InP Nanomembranes. In: ACS Photonics, vol. 8, no. 6, pp. 1735–1745, 2021, ISSN: 2330-4022, 2330-4022.
- (2021). Selective Area Epitaxy of III–V Nanostructure Arrays and Networks: Growth, Applications, and Future Directions. In: Applied Physics Reviews, vol. 8, no. 2, pp. 021302, 2021, ISSN: 1931-9401.
- (2021). Managing Resonant and Nonresonant Lasing Modes in GaAs Nanowire Random Lasers. In: Nano Letters, vol. 21, no. 9, pp. 3901–3907, 2021, ISSN: 1530-6984, 1530-6992.
- (2021). Understanding Shape Evolution and Phase Transition in InP Nanostructures Grown by Selective Area Epitaxy. In: Small, vol. 17, no. 21, pp. 2100263, 2021, ISSN: 1613-6810, 1613-6829.
- (2021). Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers. In: ACS Nano, vol. 15, no. 5, pp. 9126–9133, 2021, ISSN: 1936-0851, 1936-086X.
- (2021). Nanomechanical Behavior of Single Taper-Free GaAs Nanowires Unravelled by in-Situ TEM Mechanical Testing and Molecular Dynamics Simulation. In: Materials Science and Engineering: A, vol. 806, pp. 140866, 2021, ISSN: 09215093.
- (2021). Identifying Carbon as the Source of Visible Single-Photon Emission from Hexagonal Boron Nitride. In: Nature Materials, vol. 20, no. 3, pp. 321–328, 2021, ISSN: 1476-1122, 1476-4660.
- (2021). Identifying Carbon as the Source of Visible Single-Photon Emission from Hexagonal Boron Nitride. In: Nature Materials, vol. 20, no. 3, pp. 321–328, 2021, ISSN: 1476-1122, 1476-4660.
- (2021). Electron-Selective Contact for GaAs Solar Cells. In: ACS Applied Energy Materials, vol. 4, no. 2, pp. 1356–1364, 2021, ISSN: 2574-0962, 2574-0962.
- (2021). Lasing from InP Nanowire Photonic Crystals on InP Substrate. In: Advanced Optical Materials, vol. 9, no. 3, pp. 2001745, 2021, ISSN: 2195-1071, 2195-1071.
- (2021). Role of Defects and Grain Boundaries in the Thermal Response of Wafer-Scale hBN Films. In: Nanotechnology, vol. 32, no. 7, pp. 075702, 2021, ISSN: 0957-4484, 1361-6528.
- (2021). Understanding the Role of Facets and Twin Defects in the Optical Performance of GaAs Nanowires for Laser Applications. In: Nanoscale Horizons, vol. 6, no. 7, pp. 559–567, 2021, ISSN: 2055-6756, 2055-6764.
- (2021). Controlled Cracking for Large-Area Thin Film Exfoliation: Working Principles, Status, and Prospects. In: ACS Applied Electronic Materials, vol. 3, no. 1, pp. 145–162, 2021, ISSN: 2637-6113, 2637-6113.
- (2020). Facet-Related Non-uniform Photoluminescence in Passivated GaAs Nanowires. In: Frontiers in Chemistry, vol. 8, pp. 607481, 2020, ISSN: 2296-2646.
- (2020). What Will We Carry Forward from This Time?. In: ACS Nano, vol. 14, no. 11, pp. 14253–14254, 2020, ISSN: 1936-0851, 1936-086X.
- (2020). Electrical Properties of Compact Drop-Casted Cu2SnS3 Films. In: Journal of Electronic Materials, vol. 49, no. 11, pp. 6403–6409, 2020, ISSN: 0361-5235, 1543-186X.
- (2020). Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts. In: IEEE Journal of Photovoltaics, vol. 10, no. 6, pp. 1657–1666, 2020, ISSN: 2156-3381, 2156-3403.
- (2020). Three-Dimensional Ordered Macroporous TiO textsubscript2 –TaO emph textsubscriptx N emph textsubscripty Heterostructure for Photoelectrochemical Water Splitting. In: The Journal of Physical Chemistry C, vol. 124, no. 44, pp. 24135–24144, 2020, ISSN: 1932-7447, 1932-7455.
- (2020). Cathodoluminescence Visualisation of Local Thickness Variations of GaAs/AlGaAs Quantum-Well Tubes on Nanowires. In: Nanotechnology, vol. 31, no. 42, pp. 424001, 2020, ISSN: 0957-4484, 1361-6528.
- (2020). Polarization-Independent Indium Phosphide Nanowire Photodetectors. In: Advanced Optical Materials, vol. 8, no. 17, pp. 2000514, 2020, ISSN: 2195-1071, 2195-1071.
- (2020). Hole and Electron Effective Masses in Single InP Nanowires with a Wurtzite-Zincblende Homojunction. In: ACS Nano, vol. 14, no. 9, pp. 11613–11622, 2020, ISSN: 1936-0851, 1936-086X.
- (2020). Highly Regular Rosette-Shaped Cathodoluminescence in GaN Self-Assembled Nanodisks and Nanorods. In: Nano Research, vol. 13, no. 9, pp. 2500–2505, 2020, ISSN: 1998-0124, 1998-0000.
- (2020). Over 17% Efficiency Stand-Alone Solar Water Splitting Enabled by Perovskite-Silicon Tandem Absorbers. In: Advanced Energy Materials, vol. 10, no. 28, pp. 2000772, 2020, ISSN: 1614-6832, 1614-6840.
- (2020). Exploring the Band Structure of Wurtzite InAs Nanowires Using Photocurrent Spectroscopy. In: Nano Research, vol. 13, no. 6, pp. 1586–1591, 2020, ISSN: 1998-0124, 1998-0000.
- (2020). Phase Tailoring and Wafer-Scale Uniform Hetero-Epitaxy of Metastable-Phased Corundum $alpha$-Ga2O3 on Sapphire. In: Applied Surface Science, vol. 513, pp. 145871, 2020, ISSN: 01694332.
- (2020). Three-Dimensional Cross-Nanowire Networks Recover Full Terahertz State. In: Science, vol. 368, no. 6490, pp. 510–513, 2020, ISSN: 0036-8075, 1095-9203.
- (2020). Engineering III–V Semiconductor Nanowires for Device Applications. In: Advanced Materials, vol. 32, no. 18, pp. 1904359, 2020, ISSN: 0935-9648, 1521-4095.
- (2020). Highly Uniform InGaAs/InP Quantum Well Nanowire Array-Based Light Emitting Diodes. In: Nano Energy, vol. 71, pp. 104576, 2020, ISSN: 22112855.
- (2020). Carrier Dynamics and Recombination Mechanisms in InP Twinning Superlattice Nanowires. In: Optics Express, vol. 28, no. 11, pp. 16795, 2020, ISSN: 1094-4087.
- (2020). Strain Distribution in Wrinkled hBN Films. In: Solid State Communications, vol. 310, pp. 113847, 2020, ISSN: 00381098.
- (2020). Improving the Morphology and Crystal Quality of AlN Grown on Two-Dimensional hBN. In: Crystal Growth & Design, vol. 20, no. 3, pp. 1811–1819, 2020, ISSN: 1528-7483, 1528-7505.
- (2020). A New Editor-in-Chief for APR. In: Applied Physics Reviews, vol. 7, no. 1, pp. 010401, 2020, ISSN: 1931-9401.
- (2020). Characterization, Selection, and Microassembly of Nanowire Laser Systems. In: Nano Letters, vol. 20, no. 3, pp. 1862–1868, 2020, ISSN: 1530-6984, 1530-6992.
- (2020). Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors. In: Materials, vol. 13, no. 6, pp. 1400, 2020, ISSN: 1996-1944.
- (2020). emphIn Situ Passivation of GaAsSb Nanowires for Enhanced Infrared Photoresponse. In: Nanotechnology, vol. 31, no. 24, pp. 244002, 2020, ISSN: 0957-4484, 1361-6528.
- (2020). Non-Epitaxial Carrier Selective Contacts for III-V Solar Cells: A Review. In: Applied Materials Today, vol. 18, pp. 100503, 2020, ISSN: 23529407.
- (2020). III–V Semiconductor Materials for Solar Hydrogen Production: Status and Prospects. In: ACS Energy Letters, vol. 5, no. 2, pp. 611–622, 2020, ISSN: 2380-8195, 2380-8195.