- III-V compound semicondutor materials and devices
- Low dimentional semiconductor structures (quantum wells, qunatum dots and nanowires)
- Optoelectronice devices (lasers/LEDs, photodetector and solar cells)
- Semiconductor THz detectors
Education:
Ph.D. in Physics (2001), The Australian National University, Australia MPhil in Physics (1996), University of Science and Technology of China, China Bachelor in Applied Physics (1993), Hefei University of Technology, P.R. China
Lan Fu is currently a Professor and Head of the Department of the Electronic Materials Engineering at the Research School of Physics, the Australian National University (ANU). Professor Lan Fu’s main research interests include design, fabrication and integration of optoelectronic devices (LEDs, lasers, photodetectors and solar cells) and chemical sensors based on low-dimensional III-V compound semiconductor structures including quantum wells, self-assembled quantum dots and nanowires grown by metal-organic chemical vapour deposition (MOCVD). She has published ~200 publications (including ~150 journal papers), 3 book chapters, co-edited 6 conference proceedings/journal special issue, and holds 2 US patents. Professor Lan Fu was the recipient of the IEEE Photonic Society Graduate Student Fellowship (2000) and Distinguished Lecturer Award (2021-2022), Australian Research Council (ARC) Postdoctoral Fellowship (2002), ARF/QEII Fellowship (2005) and Future Fellowship (2012). She was also a member of ARC College of Experts (2019-2021). Professor Lan Fu has been the Chair of IEEE Nanotechnology Council Chapters & Regional Activities Committee (2019-), Associate Editor of IEEE Photonics Journal (2021-), and member of Editorial Board of Opto-Electronic Advances (2019-). She is also the Deputy Chair of the Australian Academy of Science National Committee on Materials Science and Engineering, Secretary of the Executive Committee of Australian Materials Research Society (AMRS).
- (2021). Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature. In: Advanced Materials, vol. 33, no. 49, pp. 2105729, 2021, ISSN: 0935-9648, 1521-4095.
- (2021). Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging. In: Nano Letters, vol. 21, no. 17, pp. 7388–7395, 2021, ISSN: 1530-6984, 1530-6992.
- (2021). Direct Observation and Manipulation of Hot Electrons at Room Temperature. In: National Science Review, vol. 8, no. 9, pp. nwaa295, 2021, ISSN: 2095-5138, 2053-714X.
- (2021). Two-Dimensional Materials for Light Emitting Applications: Achievement, Challenge and Future Perspectives. In: Nano Research, vol. 14, no. 6, pp. 1912–1936, 2021, ISSN: 1998-0124, 1998-0000.
- (2021). Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers. In: ACS Nano, vol. 15, no. 5, pp. 9126–9133, 2021, ISSN: 1936-0851, 1936-086X.
- (2020). Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors. In: Advanced Materials, vol. 32, no. 45, pp. 2004247, 2020, ISSN: 0935-9648, 1521-4095.
- (2020). Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts. In: IEEE Journal of Photovoltaics, vol. 10, no. 6, pp. 1657–1666, 2020, ISSN: 2156-3381, 2156-3403.
- (2020). Three-Dimensional Cross-Nanowire Networks Recover Full Terahertz State. In: Science, vol. 368, no. 6490, pp. 510–513, 2020, ISSN: 0036-8075, 1095-9203.
- (2020). Engineering III–V Semiconductor Nanowires for Device Applications. In: Advanced Materials, vol. 32, no. 18, pp. 1904359, 2020, ISSN: 0935-9648, 1521-4095.
- (2020). Highly Uniform InGaAs/InP Quantum Well Nanowire Array-Based Light Emitting Diodes. In: Nano Energy, vol. 71, pp. 104576, 2020, ISSN: 22112855.
- (2020). Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors. In: Materials, vol. 13, no. 6, pp. 1400, 2020, ISSN: 1996-1944.
- (2020). emphIn Situ Passivation of GaAsSb Nanowires for Enhanced Infrared Photoresponse. In: Nanotechnology, vol. 31, no. 24, pp. 244002, 2020, ISSN: 0957-4484, 1361-6528.