- III-V compound semicondutor materials and devices
- Low dimentional semiconductor structures (quantum wells, qunatum dots and nanowires)
- Optoelectronice devices (lasers/LEDs, photodetector and solar cells)
- Semiconductor THz detectors
Education:
Ph.D. in Physics (2001), The Australian National University, Australia MPhil in Physics (1996), University of Science and Technology of China, China Bachelor in Applied Physics (1993), Hefei University of Technology, P.R. China
Lan Fu is currently a Professor at the Research School of Physics, the Australian National University (ANU). Professor Lan Fu was the recipient of the IEEE Photonic Society Graduate Student Fellowship (2000), Australian Research Council (ARC) Postdoctoral Fellowship (2002), ARF/QEII Fellowship (2005) and Future Fellowship (2012).
Professor Fu is a senior member of IEEE, IEEE/Photonics and Electron Devices societies and was the past chair of the Photonics Society, Electron Devices Society and Nanotechnology Council chapters of the IEEE ACT section. Her main research interests include III-V compound semiconductor materials and structures (including quantum wells, self-assembled quantum dots and nanowires) grown by metal-organic chemical vapour deposition (MOCVD); as well as design and fabrication of III-V semiconductor based optoelectronic devices (LEDs, lasers and photodetectors), solar cells and THz detectors.
- (2021). Self-Powered InP Nanowire Photodetector for Single-Photon Level Detection at Room Temperature. In: Advanced Materials, vol. 33, no. 49, pp. 2105729, 2021, ISSN: 0935-9648, 1521-4095.
- (2021). Broadband GaAsSb Nanowire Array Photodetectors for Filter-Free Multispectral Imaging. In: Nano Letters, vol. 21, no. 17, pp. 7388–7395, 2021, ISSN: 1530-6984, 1530-6992.
- (2021). Direct Observation and Manipulation of Hot Electrons at Room Temperature. In: National Science Review, vol. 8, no. 9, pp. nwaa295, 2021, ISSN: 2095-5138, 2053-714X.
- (2021). Two-Dimensional Materials for Light Emitting Applications: Achievement, Challenge and Future Perspectives. In: Nano Research, vol. 14, no. 6, pp. 1912–1936, 2021, ISSN: 1998-0124, 1998-0000.
- (2021). Ultralow Threshold, Single-Mode InGaAs/GaAs Multiquantum Disk Nanowire Lasers. In: ACS Nano, vol. 15, no. 5, pp. 9126–9133, 2021, ISSN: 1936-0851, 1936-086X.
- (2020). Liquid-Metal Synthesized Ultrathin SnS Layers for High-Performance Broadband Photodetectors. In: Advanced Materials, vol. 32, no. 45, pp. 2004247, 2020, ISSN: 0935-9648, 1521-4095.
- (2020). Design of Ultrathin InP Solar Cell Using Carrier Selective Contacts. In: IEEE Journal of Photovoltaics, vol. 10, no. 6, pp. 1657–1666, 2020, ISSN: 2156-3381, 2156-3403.
- (2020). Three-Dimensional Cross-Nanowire Networks Recover Full Terahertz State. In: Science, vol. 368, no. 6490, pp. 510–513, 2020, ISSN: 0036-8075, 1095-9203.
- (2020). Engineering III–V Semiconductor Nanowires for Device Applications. In: Advanced Materials, vol. 32, no. 18, pp. 1904359, 2020, ISSN: 0935-9648, 1521-4095.
- (2020). Highly Uniform InGaAs/InP Quantum Well Nanowire Array-Based Light Emitting Diodes. In: Nano Energy, vol. 71, pp. 104576, 2020, ISSN: 22112855.
- (2020). Review on III-V Semiconductor Single Nanowire-Based Room Temperature Infrared Photodetectors. In: Materials, vol. 13, no. 6, pp. 1400, 2020, ISSN: 1996-1944.
- (2020). emphIn Situ Passivation of GaAsSb Nanowires for Enhanced Infrared Photoresponse. In: Nanotechnology, vol. 31, no. 24, pp. 244002, 2020, ISSN: 0957-4484, 1361-6528.