- Infrared technologies
- Microelectromechanical systems
- Compound semiconductors
- Semiconductors devices
Bachelor of Engineering (Honours), 1973, The University of Western Australia (Electronic Engineering)
Doctor of Philosophy, 1979, The University of Western Australia (Electronic Engineering)
Professor Faraone was born in Delianuova, PRC, Italy. From 1977-1978 he was an Associate Lecturer at the University of Western Australia. He then went overseas and was a Research Scientist at the Lehigh University, USA from 1979-1980. From 1980-1986 he was Member of Technical Staff, RCA Laboratories, Princeton, USA. In 1986 he returned to Australia and from 1986 -1993 was a Senior Lecturer at the University of Western Australia. He then headed back overseas in 1993 to take a position as a Visiting Professor at the Leuven University in Belgium. In 1997 returned to the United States as a Visiting Professor at the University of California. From 1993-1998 he was an Associate Professor at the University of Western Australia, then from 1999-2003 Head of Dept/School of EE&CE at the University of Western Australia. Currently he is a Professor at the University of Western Australia and serves as the Director of the Western Australian Node of the Australian National Fabrication Facility.
Professor Faraone’s areas of research and industrial experience cover Si, GaAs, HgCdTe, AlGaN/GaN and Optical MEMS device physics and modelling, device fabrication technology and reliability, and electrical and physical characterisation of semiconductor materials and device structures. Areas of expertise include: electrical properties of defects and deep-level impurities in semiconductors; tunnelling effects in semiconductor device structures; physics and reliability aspects of non-volatile memories; radiation effects in MOS devices; GaAs fabrication technology and device physics; HgCdTe infrared materials, detector technology and reliability; AlGaN/GaN device physics; Optical MEMS technology. He has six years (1981-1986) of industrial experience at the RCA Corporation, David Sarnoff Research Center, Princeton, NJ, USA, including two years as Project Leader responsible for the development of VLSI CMOS technologies for non-volatile memory applications and one year as Principal Investigator of research team working on space radiation effects in silicon MOS integrated circuits. He is head of the Microelectronics Research Group (MRG), which currently consists of 13 academic and research staff, and 15 postgraduate PhD students. MRG is internationally renowned for ground-breaking achievements and world-leading capability in infrared science and technology. In particular, the academically non-traditional impact and translation of technologies into industry is strongly represented within the Group.
Professor Faraone holds over ten patents, has supervised more than 35 postgraduate student completions, and published more than 400 refereed technical papers. His leadership has been recognised by his Membership to the Order of Australia (AM), and Fellowships of the IEEE (FIEEE), the Australian Academy of Science (FAA), and the Australian Academy of Technological Sciences and Engineering (FTSE).
- (2021). Molecular Dynamics Study of Heteroepitaxial Growth of HgCdTe on Perfect and Dislocated (211)B CdZnTe Substrates. In: ACS Applied Electronic Materials, vol. 3, no. 11, pp. 5102–5113, 2021, ISSN: 2637-6113, 2637-6113.
- (2021). Inversion Layer Electron Mobility Distribution in Fully-Depleted Silicon-on-Insulator MOSFETs. In: Solid-State Electronics, vol. 183, pp. 108074, 2021, ISSN: 00381101.
- (2021). Pattern Transferring of Prolift-100 Polymer Sacrificial Layers with Controlled Sidewall Profile. In: Journal of Micromechanics and Microengineering, vol. 31, no. 7, pp. 075001, 2021, ISSN: 0960-1317, 1361-6439.
- (2021). Dislocation Core Energies of the 0textdegree Perfect, 60textdegree Perfect, 30textdegree Partial, and 90textdegree Partial Dislocations in CdTe, HgTe, and ZnTe: A Molecular Statics and Elasticity Theory Analysis. In: Materials Today Communications, vol. 26, pp. 101949, 2021, ISSN: 23524928.
- (2020). A Theoretical and Experimental Study of the Energy Bandgap in MBE-grown Hg1-Cd Se. In: Infrared Physics & Technology, vol. 111, pp. 103522, 2020, ISSN: 13504495.
- (2020). Strained CdZnTe/CdTe Superlattices As Threading Dislocation Filters in Lattice Mismatched MBE Growth of CdTe on GaSb. In: Journal of Electronic Materials, vol. 49, no. 11, pp. 6983–6989, 2020, ISSN: 0361-5235, 1543-186X.
- (2020). Vertical Carrier Transport in Strain-Balanced InAs/InAsSb Type-II Superlattice Material. In: Applied Physics Letters, vol. 116, no. 18, pp. 182109, 2020, ISSN: 0003-6951, 1077-3118.
- (2020). Locally-Strain-Induced Heavy-Hole-Band Splitting Observed in Mobility Spectrum of p-Type InAs Grown on GaAs. In: physica status solidi (RRL) – Rapid Research Letters, vol. 14, no. 4, pp. 1900604, 2020, ISSN: 1862-6254, 1862-6270.
- (2020). Crystallization of Bismuth Iron Garnet Thin Films Using Capacitively Coupled Oxygen Plasmas. In: Journal of Applied Physics, vol. 127, no. 4, pp. 043302, 2020, ISSN: 0021-8979, 1089-7550.